IUNCUS METALLUS Contactus
| Applicatio: |
| Contactores, murorum ambitus, thermostatorum, virgas intelligentium, etc |
| Materia: |
| AgC,AgW,AgWC,AgWCC,AgniC,CuW |
AgC
Microstructure
Communia
AgC materiae contactus ostendent altissimam resistentiam contra contactum glutino et infimum resistentiam.Resistentia contra glutino augetur cum contento graphite augendo.AgC materiae se habent mores lubricantes, cum contactus lapsus usus est.
Applicationem Scope
Maxime in permutationibus tutelae utendum est ut MCBs, MCCBs, virgas tutelares current residuas vel virgas tutelares motores.Applicatio regulariter in par asymmetrica cum AgNi, AgW, AgWC vel Cu.
Materia Properties
| AgC | AgC | AgC | AgC | AgC | AgC | |
| C Content(wt.%) | 3±0.5 | 4±0.5 | 5±0.5 | 3±0.5 | 3.8±0.5 | 4±0.5 |
| Densitas (g/cnre) | ≥9.10 | ≥8.9 | ≥8.60 | ≥9.10 | ≥9.00 | ≥8.9 |
| Elec.Resistivity (.10 • cm) | ≤2.10 | ≤2.20 | ≤2.30 | ≤2.10 | ≤2.20 | ≤2.20 |
| duritia HV | ≥42 | ≥42 | ≥42 | ≥42 | ≥42 | ≥42 |
| Vestibulum processus | Sintering-Extruding | |||||
Product Genera
AgW
Microstructure
Communia
Contactus ex AgW ostendunt altam resistentiam anti-glutinos et magna resistentia ad exesum arcui propter altum punctum liquescens et altam duritiem W, ipsi quoque bonam electricam et scelerisque conductionem habent.
Applicationem Scope
AgW materiae maxime adhibentur in intentione demissa MCCB et ACB et permutationes tutelae.
Materia Properties
| AgW | AgW | AgW | AgW | AgW | AgW | |
| Ag Content (wt.%) | 50±2 | 45±2 | 40±2 | 35±2 | 30±2 | 25±2 |
| Densitas (g/cm3) | ≥13.15 | ≥13.55 | ≥14.00 | ≥14.50 | ≥14.90 | ≥15.40 |
| EIec.Resistivity (1.10•cm) | ≤3.00 | ≤3.20 | ≤3.40 | ≤3.60 | ≤3.80 | ≤4.20 |
| duritia HV | ≥100 | ≥110 | ≥120 | ≥130 | ≥145 | ≥160 |
| Vestibulum processus | Infiltration | |||||
Product Genera
AgWC
Microstructure
Communia
Contactus AgWC materias quae componentes refractoriae WC continentes duritiem et resistentiam in usu mechanico habent, humilem inclinationem ad contactum glutino, et resistentiam in servitio contactus relative stabilis habent.Contactus AgWC infiltration metallurgiae pulveris efficiuntur.
Applicationem Scope
Maxime in gravibus officiis mutandi machinis, sicut circa praevaricatores.residua vena ambitus praevaricatores.In multis casibus adhibentur in par asymmetrica cum AgC
Materia Properties
| AgWC | AgWC | AgWC | AgWC | |
| Ag Content (wt.%) | 65±2 | 60±2 | 50±2 | 35±2 |
| Densitas (g/cm3) | ≥11.50 | ≥11.80 | ≥12.20 | ≥13.00 |
| Elec.Resistivity (1.10•cm) | ≤3.30 | .A.50 | 4.50 | 5.20 |
| duritia HV | ≥100 | ≥125 | ≥135 | ≥155 |
| Vestibulum processus | Infiltration | |||
Product Genera
AgWCC
Microstructure
Communia
Ob contenti magni AgWCC contactus AgWCC resistentiam contactus habent humilem.Altissimas habent proprietates anti-wedoneae debitae carbide et graphiten tungsten continentem cum puncto alto liquefacto.AgWCC contactus fabricantur per syntering.
Applicationem Scope
Maxime in gravibus officiis mutandi machinis, sicut circa praevaricatores.residua vena ambitus praevaricatores.In multis casibus asymmetricis cum AgNi, AgW vel AgWC adhibentur.
Materia Properties
| AgWCC | AgWCC | AgWCC | AgWCC | |
| Ag Content (wt.%) | 85±1 | 75±1 | 79±1 | 74.5±1 |
| Densitas (g/cm3) | ≥9.40 | ≥10.25 | ≥8.80 | ≥10.50 |
| Elec.Resistivity (u0 • cnn) | ≤3.40 | ≤3.40 | ≤3.80 | ≤3.45 |
| duritia HV | ≥50 | ≥80 | ≥60 | ≥75 |
| Vestibulum processus | Mixing-Compacting-Sintering | |||
Product Genera
AgNiC
Microstructure
Communia
Contactus AgNiC commoda contactus agNi et AgC coniungunt.Repugnantiam bonam habent ad exesa electrica et anti-conglutinos possessiones.
Applicationem Scope
AgniC contactus maxime adhibentur in MCCB, ACB.
Materia Properties
| AgNiC | AgNiC | 3AgNiC | |
| Ag Content (wt.%) | 67±1 | 73±1 | 94±1 |
| Densitas (g/cm3) | ≥8.70 | ≥9.10 | ≥8.50 |
| Elec.Resistivity (.10 • cm) | ≤4.50 | ≤3.50 | ≤3.50 |
| duritia HV | ≥50 | ≥60 | ≥30 |
| Vestibulum processus | Mixing-Compacting-Sintering | ||
Product Genera
CuW
Microstructure
Communia
CuW materiae contactus praestantem resistentiam habent contra exesum arcus et proprietates anti- glutino usque ad venam altissimam.Contactus cuW in multa varietate figurarum per pulveris metallurgiam (press/sintering vel infiltration) producuntur.Tungsten contentum est 50%-80%.
Applicationem Scope
Contactus cuW maxime adhibentur in media et alta intentione switchgears.Applicationes typicae sunt in alta intentione circa praevaricatores, virgas oneratas, permutator permutat sonum nummulariorum et contactus humilium intentionum arcentium.
Praeterea CuW materiae late uti electrodes, praesertim pro glutino adhibentur.
Materia Properties
| CuW | CuW | CuW | |
| Cu Content (wt.%) | 50±2 | 40±2 | 30±2 |
| Densitas (g/cm3) | ≥11.85 | ≥12.75 | ≥13.80 |
| EIec.Resistivity (p0 cm) | ≤3.20 | ≤3.70 | ≤4.10 |
| duritia HV | ≥115 | ≥140 | ≥175 |
| Vestibulum processus | Infiltration | ||
Product Genera
